2SA1012B(RANGE:120-270) Transistor Datasheet & Specifications
PNP
TO-252-2L
General Purpose
JSCJ
VCEO
50V
Ic Max
2A
Pd Max
1.25W
hFE Gain
120
Quick Reference
The 2SA1012B(RANGE:120-270) is a PNP bipolar transistor in a TO-252-2L package by JSCJ. This datasheet provides complete specifications including 50V breakdown voltage and 2A continuous collector current. Download the 2SA1012B(RANGE:120-270) datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | JSCJ | Original Manufacturer |
| Package | TO-252-2L | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 50V | Breakdown voltage |
| Ic | 2A | Collector current |
| Pd | 1.25W | Power dissipation |
| DC Current Gain | 120 | hFE / Beta |
| Frequency | 200MHz | Transition speed (fT) |
| VCEsat | - | Saturation voltage |
| Vebo | - | Emitter-Base voltage |
| Cutoff Current | - | Leakage (ICBO) |
| Temp | -55℃~+150℃ | Operating temp |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|---|---|---|---|---|
| 2SA1012(RANGE:120-240) | PNP | TO-252-2L | 50V | 5A | 1.25W |
| 2SB1184(RANGE:120-270) | PNP | TO-252-2L | 50V | 3A | 1W |
| MJD42C | PNP | TO-252-2L | 100V | 3A | 1W |
| MJD42C | PNP | TO-252-2L | 100V | 6A | 1.25W |
| MJD127 | PNP | TO-252-2L | 100V | 8A | 1.5W |
| 2SB1184 | PNP | TO-252-2L | 50V | 3A | 1W |
| MJD117 | PNP | TO-252-2L | 100V | 2A | 1.75W |
| 2SA1952 | PNP | TO-252-2L | 60V | 5A | 1W |