MJD127 Transistor Datasheet & Specifications

PNP TO-252-2L General Purpose JSCJ
VCEO
100V
Ic Max
8A
Pd Max
1.5W
hFE Gain
12000
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Quick Reference

The MJD127 is a PNP bipolar transistor in a TO-252-2L package by JSCJ. This datasheet provides complete specifications including 100V breakdown voltage and 8A continuous collector current. Download the MJD127 datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerJSCJOriginal Manufacturer
PackageTO-252-2LPhysical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO100VBreakdown voltage
Ic8ACollector current
Pd1.5WPower dissipation
DC Current Gain12000hFE / Beta
Frequency-Transition speed (fT)
VCEsat4.5VSaturation voltage
Vebo-Emitter-Base voltage
Cutoff Current10uALeakage (ICBO)
Temp-55℃~+150℃Operating temp

Equivalent Transistors & Alternatives

Sorry, we do not have any direct replacements for this part in our database at this time.
View all TO-252-2L PNP Transistors ›