MJD42C Transistor Datasheet & Specifications
PNP
TO-252-2L
General Purpose
HXY MOSFET
VCEO
100V
Ic Max
3A
Pd Max
1W
hFE Gain
-
Quick Reference
The MJD42C is a PNP bipolar transistor in a TO-252-2L package by HXY MOSFET. This datasheet provides complete specifications including 100V breakdown voltage and 3A continuous collector current. Download the MJD42C datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | HXY MOSFET | Original Manufacturer |
| Package | TO-252-2L | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 100V | Breakdown voltage |
| Ic | 3A | Collector current |
| Pd | 1W | Power dissipation |
| DC Current Gain | - | hFE / Beta |
| Frequency | 50MHz | Transition speed (fT) |
| VCEsat | 500mV@3A,0.375A | Saturation voltage |
| Vebo | 6V | Emitter-Base voltage |
| Cutoff Current | 100nA | Leakage (ICBO) |
| Temp | -55℃~+150℃ | Operating temp |