2SB1184(RANGE:120-270) Transistor Datasheet & Specifications
PNP
TO-252-2L
General Purpose
JSCJ
VCEO
50V
Ic Max
3A
Pd Max
1W
hFE Gain
82
Quick Reference
The 2SB1184(RANGE:120-270) is a PNP bipolar transistor in a TO-252-2L package by JSCJ. This datasheet provides complete specifications including 50V breakdown voltage and 3A continuous collector current. Download the 2SB1184(RANGE:120-270) datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | JSCJ | Original Manufacturer |
| Package | TO-252-2L | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 50V | Breakdown voltage |
| Ic | 3A | Collector current |
| Pd | 1W | Power dissipation |
| DC Current Gain | 82 | hFE / Beta |
| Frequency | 70MHz | Transition speed (fT) |
| VCEsat | 1V | Saturation voltage |
| Vebo | 5V | Emitter-Base voltage |
| Cutoff Current | 1uA | Leakage (ICBO) |
| Temp | -55โ~+150โ | Operating temp |