2SA1952 Transistor Datasheet & Specifications
PNP
TO-252-2L
High Power
JSCJ
VCEO
60V
Ic Max
5A
Pd Max
1W
hFE Gain
120
Quick Reference
The 2SA1952 is a PNP bipolar transistor in a TO-252-2L package by JSCJ. This datasheet provides complete specifications including 60V breakdown voltage and 5A continuous collector current. Download the 2SA1952 datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | JSCJ | Original Manufacturer |
| Package | TO-252-2L | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 60V | Breakdown voltage |
| Ic | 5A | Collector current |
| Pd | 1W | Power dissipation |
| DC Current Gain | 120 | hFE / Beta |
| Frequency | 80MHz | Transition speed (fT) |
| VCEsat | - | Saturation voltage |
| Vebo | - | Emitter-Base voltage |
| Cutoff Current | - | Leakage (ICBO) |
| Temp | -55℃~+150℃ | Operating temp |