MJD117 Transistor Datasheet & Specifications
PNP
TO-252-2L
General Purpose
JSCJ
VCEO
100V
Ic Max
2A
Pd Max
1.75W
hFE Gain
500
Quick Reference
The MJD117 is a PNP bipolar transistor in a TO-252-2L package by JSCJ. This datasheet provides complete specifications including 100V breakdown voltage and 2A continuous collector current. Download the MJD117 datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | JSCJ | Original Manufacturer |
| Package | TO-252-2L | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 100V | Breakdown voltage |
| Ic | 2A | Collector current |
| Pd | 1.75W | Power dissipation |
| DC Current Gain | 500 | hFE / Beta |
| Frequency | 25MHz | Transition speed (fT) |
| VCEsat | - | Saturation voltage |
| Vebo | - | Emitter-Base voltage |
| Cutoff Current | - | Leakage (ICBO) |
| Temp | -55℃~+150℃ | Operating temp |