VBMB1208N MOSFET Datasheet & Specifications

N-Channel TO-220F Standard Power VBsemi Elec
Vds Max
200V
Id Max
14A
Rds(on)
65mΩ@10V
Vgs(th)
4V

Quick Reference

The VBMB1208N is an N-Channel MOSFET in a TO-220F package, manufactured by VBsemi Elec. It supports a drain-source breakdown voltage of 200V and a continuous drain current of 14A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerVBsemi ElecOriginal Manufacturer
PackageTO-220FPhysical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)200VMax breakdown voltage
Continuous Drain Current (Id)14AMax current handling
Power Dissipation (Pd)42WMax thermal limit
On-Resistance (Rds(on))65mΩ@10VResistance when turned fully on
Gate Threshold (Vgs(th))4VVoltage required to turn on
Gate Charge (Qg)70nC@10VSwitching energy
Input Capacitance (Ciss)1.3nFInternal gate capacitance
Output Capacitance (Coss)430pFInternal output capacitance
Operating Temp-55℃~+150℃Safe junction temperature range

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