TIP102G Datasheet & Equivalents

NPN TO-220 General Purpose onsemi
VCEO
100V
Ic Max
8A
Pd Max
2W
hFE Gain
1000

Quick Reference

The TIP102G is a NPN bipolar junction transistor in a TO-220 package, manufactured by onsemi. It supports a breakdown voltage of 100V and continuous collector current of 8A. It is widely used in switching and amplification circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageTO-220Physical mounting
Transistor TypeBJTBipolar Junction Transistor
CategorySingleConfiguration
Collector-Emitter Voltage (VCEO)100VMax breakdown voltage
Collector Current (Ic)8AMax current handling
Power Dissipation (Pd)2WMax thermal limit
DC Current Gain (hFE)1000Base signal amplification ratio
Transition Frequency (fT)-Max operating frequency
Saturation Voltage (VCEsat)2.5VVoltage drop when fully ON
Emitter-Base Voltage (Vebo)-Max emitter-base breakdown
Collector Cutoff Current50uALeakage current when OFF
Operating Temp-65โ„ƒ~+150โ„ƒ@(Tj)Safe junction temperature range

Equivalent Transistors & Alternatives

PartTypePackageVCEOIChFEPdManufacturer / Datasheet
TIP102 NPN TO-220 100V 8A 1000 2W
BD801 NPN TO-220 100V 8A 30 65W
TIP41C NPN TO-220 100V 9A 30 65W
BLUE ROCKET ๐Ÿ“„ PDF
BDX33C NPN TO-220 100V 10A 750 70W
2SC3157 NPN TO-220 100V 10A 200 60W
BDW93C NPN TO-220 100V 12A 20000 80W
MJE15028 NPN TO-220 120V 8A 20 50W
MJE15030G NPN TO-220 150V 8A 40 50W
MJE15030 NPN TO-220 150V 8A 20 50W
SPTECH
MJE15032G NPN TO-220 250V 8A 70 50W
MJE15032G NPN TO-220 250V 8A 70 50W