BD801 Datasheet & Equivalents

NPN TO-220 High Power SPTECH
VCEO
100V
Ic Max
8A
Pd Max
65W
hFE Gain
30

Quick Reference

The BD801 is a NPN bipolar junction transistor in a TO-220 package, manufactured by SPTECH. It supports a breakdown voltage of 100V and continuous collector current of 8A. It is widely used in switching and amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerSPTECHOriginal Manufacturer
PackageTO-220Physical mounting
Transistor TypeBJTBipolar Junction Transistor
CategorySingleConfiguration
Collector-Emitter Voltage (VCEO)100VMax breakdown voltage
Collector Current (Ic)8AMax current handling
Power Dissipation (Pd)65WMax thermal limit
DC Current Gain (hFE)30Base signal amplification ratio
Transition Frequency (fT)3MHzMax operating frequency
Saturation Voltage (VCEsat)1VVoltage drop when fully ON
Emitter-Base Voltage (Vebo)5VMax emitter-base breakdown
Collector Cutoff Current100uALeakage current when OFF
Operating Temp-Safe junction temperature range

Equivalent Transistors & Alternatives

PartTypePackageVCEOIChFEPdManufacturer / Datasheet
TIP102 NPN TO-220 100V 8A 1000 2W
TIP102G NPN TO-220 100V 8A 1000 2W
TIP41C NPN TO-220 100V 9A 30 65W
BLUE ROCKET ๐Ÿ“„ PDF
2SC3157 NPN TO-220 100V 10A 200 60W
BDX33C NPN TO-220 100V 10A 750 70W
BDW93C NPN TO-220 100V 12A 20000 80W
MJE15028 NPN TO-220 120V 8A 20 50W
MJE15030 NPN TO-220 150V 8A 20 50W
SPTECH
MJE15030G NPN TO-220 150V 8A 40 50W
MJE15032G NPN TO-220 250V 8A 70 50W
MJE15032G NPN TO-220 250V 8A 70 50W