BDX33C Datasheet & Equivalents
NPN
TO-220
High Power
ST
VCEO
100V
Ic Max
10A
Pd Max
70W
hFE Gain
750
Quick Reference
The BDX33C is a NPN bipolar junction transistor in a TO-220 package, manufactured by ST. It supports a breakdown voltage of 100V and continuous collector current of 10A. It is widely used in switching and amplification circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | ST | Original Manufacturer |
| Package | TO-220 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| Category | Single | Configuration |
| Collector-Emitter Voltage (VCEO) | 100V | Max breakdown voltage |
| Collector Current (Ic) | 10A | Max current handling |
| Power Dissipation (Pd) | 70W | Max thermal limit |
| DC Current Gain (hFE) | 750 | Base signal amplification ratio |
| Transition Frequency (fT) | - | Max operating frequency |
| Saturation Voltage (VCEsat) | 2.5V | Voltage drop when fully ON |
| Emitter-Base Voltage (Vebo) | - | Max emitter-base breakdown |
| Collector Cutoff Current | 200uA | Leakage current when OFF |
| Operating Temp | - | Safe junction temperature range |