SI7956DP-T1-E3 MOSFET Array Datasheet & Equivalents

N-Channel Array - High-Voltage VISHAY
Vds Max
150V
Id Max
4.1A
Rds(on)
115mΩ@6V
Vgs(th)
4V

Quick Reference

The SI7956DP-T1-E3 is a N-Channel Array in a - package, manufactured by VISHAY. Each channel supports a drain-source breakdown voltage of 150V and a continuous drain current of 4.1A. It is ideal for high-density boards and compact switching circuits.

Technical Specifications

ParameterValueDescription
ManufacturerVISHAYOriginal Manufacturer
Package-Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategoryArrayConfiguration
Drain-Source Voltage (Vds)150VMax breakdown voltage
Continuous Drain Current (Id)4.1AMax current handling
Power Dissipation (Pd)3.5WMax thermal limit
On-Resistance (Rds(on))115mΩ@6VResistance when turned fully on
Gate Threshold (Vgs(th))4VVoltage required to turn on
Gate Charge (Qg)26nC@10VSwitching energy
Input Capacitance (Ciss)-Internal gate capacitance
Output Capacitance (Coss)-Internal output capacitance
Operating Temp-55℃~+150℃Safe junction temperature range

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