APTC60HM45SCTG MOSFET Array Datasheet & Equivalents

N-Channel Array - High-Voltage MICROCHIP
Vds Max
600V
Id Max
49A
Rds(on)
45mΩ@10V
Vgs(th)
3.9V

Quick Reference

The APTC60HM45SCTG is a N-Channel Array in a - package, manufactured by MICROCHIP. Each channel supports a drain-source breakdown voltage of 600V and a continuous drain current of 49A. It is ideal for high-density boards and compact switching circuits.

Technical Specifications

ParameterValueDescription
ManufacturerMICROCHIPOriginal Manufacturer
Package-Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategoryArrayConfiguration
Drain-Source Voltage (Vds)600VMax breakdown voltage
Continuous Drain Current (Id)49AMax current handling
Power Dissipation (Pd)250WMax thermal limit
On-Resistance (Rds(on))45mΩ@10VResistance when turned fully on
Gate Threshold (Vgs(th))3.9VVoltage required to turn on
Gate Charge (Qg)-Switching energy
Input Capacitance (Ciss)7.2nFInternal gate capacitance
Output Capacitance (Coss)8.5nFInternal output capacitance
Operating Temp-40℃~+150℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
APTC60TAM21SCTPAG N-Channel Array - 600V 116A 21mΩ@10V 3.6V
MICROCHIP 📄 PDF
APTC60HM24T3G N-Channel Array - 600V 95A 24mΩ@10V 3.9V
MICROCHIP 📄 PDF
APTC60AM45B1G N-Channel Array - 600V 49A 45mΩ@10V 3.9V
MICROCHIP 📄 PDF