APTC60HM24T3G MOSFET Array Datasheet & Equivalents

N-Channel Array - High-Voltage MICROCHIP
Vds Max
600V
Id Max
95A
Rds(on)
24mΩ@10V
Vgs(th)
3.9V

Quick Reference

The APTC60HM24T3G is a N-Channel Array in a - package, manufactured by MICROCHIP. Each channel supports a drain-source breakdown voltage of 600V and a continuous drain current of 95A. It is ideal for high-density boards and compact switching circuits.

Technical Specifications

ParameterValueDescription
ManufacturerMICROCHIPOriginal Manufacturer
Package-Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategoryArrayConfiguration
Drain-Source Voltage (Vds)600VMax breakdown voltage
Continuous Drain Current (Id)95AMax current handling
Power Dissipation (Pd)462WMax thermal limit
On-Resistance (Rds(on))24mΩ@10VResistance when turned fully on
Gate Threshold (Vgs(th))3.9VVoltage required to turn on
Gate Charge (Qg)300nC@10VSwitching energy
Input Capacitance (Ciss)14.4nFInternal gate capacitance
Output Capacitance (Coss)17nFInternal output capacitance
Operating Temp-40℃~+150℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
APTC60TAM21SCTPAG N-Channel Array - 600V 116A 21mΩ@10V 3.6V
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