APTC60DDAM70T1G MOSFET Array Datasheet & Equivalents

N-Channel Array - High-Voltage MICROCHIP
Vds Max
600V
Id Max
39A
Rds(on)
70mΩ@10V
Vgs(th)
3.9V

Quick Reference

The APTC60DDAM70T1G is a N-Channel Array in a - package, manufactured by MICROCHIP. Each channel supports a drain-source breakdown voltage of 600V and a continuous drain current of 39A. It is ideal for high-density boards and compact switching circuits.

Technical Specifications

ParameterValueDescription
ManufacturerMICROCHIPOriginal Manufacturer
Package-Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategoryArrayConfiguration
Drain-Source Voltage (Vds)600VMax breakdown voltage
Continuous Drain Current (Id)39AMax current handling
Power Dissipation (Pd)70WMax thermal limit
On-Resistance (Rds(on))70mΩ@10VResistance when turned fully on
Gate Threshold (Vgs(th))3.9VVoltage required to turn on
Gate Charge (Qg)259nC@10VSwitching energy
Input Capacitance (Ciss)7nFInternal gate capacitance
Output Capacitance (Coss)2.56nFInternal output capacitance
Operating Temp-40℃~+150℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
APTC60TAM21SCTPAG N-Channel Array - 600V 116A 21mΩ@10V 3.6V
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APTC60HM24T3G N-Channel Array - 600V 95A 24mΩ@10V 3.9V
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APTC60AM45B1G N-Channel Array - 600V 49A 45mΩ@10V 3.9V
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APTC60HM45SCTG N-Channel Array - 600V 49A 45mΩ@10V 3.9V
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CBB032M12FM3 N-Channel Array - 1.2kV 41A 44mΩ@15V 3.9V
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