SI7946ADP-T1-GE3 MOSFET Array Datasheet & Equivalents
N-Channel Array
-
High-Voltage
VISHAY
Vds Max
150V
Id Max
7.7A
Rds(on)
256mΩ@6V
Vgs(th)
3.5V
Quick Reference
The SI7946ADP-T1-GE3 is a N-Channel Array in a - package, manufactured by VISHAY. Each channel supports a drain-source breakdown voltage of 150V and a continuous drain current of 7.7A. It is ideal for high-density boards and compact switching circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | VISHAY | Original Manufacturer |
| Package | - | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Array | Configuration |
| Drain-Source Voltage (Vds) | 150V | Max breakdown voltage |
| Continuous Drain Current (Id) | 7.7A | Max current handling |
| Power Dissipation (Pd) | 19.8W | Max thermal limit |
| On-Resistance (Rds(on)) | 256mΩ@6V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 3.5V | Voltage required to turn on |
| Gate Charge (Qg) | 6.5nC@10V | Switching energy |
| Input Capacitance (Ciss) | 230pF | Internal gate capacitance |
| Output Capacitance (Coss) | 47pF | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| FS50UMJ-3 | N-Channel Array | - | 150V | 50A | 30mΩ@10V | 2V | RENESAS 📄 PDF |
| APTC60TAM21SCTPAG | N-Channel Array | - | 600V | 116A | 21mΩ@10V | 3.6V | MICROCHIP 📄 PDF |
| APTC60HM24T3G | N-Channel Array | - | 600V | 95A | 24mΩ@10V | 3.9V | MICROCHIP 📄 PDF |
| APTC60AM45B1G | N-Channel Array | - | 600V | 49A | 45mΩ@10V | 3.9V | MICROCHIP 📄 PDF |
| APTC60HM45SCTG | N-Channel Array | - | 600V | 49A | 45mΩ@10V | 3.9V | MICROCHIP 📄 PDF |
| APTC60DDAM70T1G | N-Channel Array | - | 600V | 39A | 70mΩ@10V | 3.9V | MICROCHIP 📄 PDF |
| CBB032M12FM3 | N-Channel Array | - | 1.2kV | 41A | 44mΩ@15V | 3.9V | Wolfspeed 📄 PDF |