PTD40N120 MOSFET Datasheet & Specifications

N-Channel TO-252 Logic-Level HT(Shenzhen Jinyu Semicon)
Vds Max
40V
Id Max
120A
Rds(on)
2.7mΩ@10V
Vgs(th)
2.2V

Quick Reference

The PTD40N120 is an N-Channel MOSFET in a TO-252 package, manufactured by HT(Shenzhen Jinyu Semicon). It supports a drain-source breakdown voltage of 40V and a continuous drain current of 120A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerHT(Shenzhen Jinyu Semicon)Original Manufacturer
PackageTO-252Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)40VMax breakdown voltage
Continuous Drain Current (Id)120AMax current handling
Power Dissipation (Pd)95WMax thermal limit
On-Resistance (Rds(on))2.7mΩ@10VResistance when turned fully on
Gate Threshold (Vgs(th))2.2VVoltage required to turn on
Gate Charge (Qg)130nC@10VSwitching energy
Input Capacitance (Ciss)7.11nFInternal gate capacitance
Output Capacitance (Coss)483pFInternal output capacitance
Operating Temp-Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
CMD019N04L N-Channel TO-252 40V 150A 1.6mΩ@10V 2V
SP40N02HTH N-Channel TO-252 40V 130A 2.5mΩ@10V 2.6V
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HGD032N04A N-Channel TO-252 40V 145A 2.5mΩ@10V 2.5V
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YJD120N04A N-Channel TO-252 40V 120A 2.8mΩ@10V 1V
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DD3R5NG N-Channel TO-252 40V 120A 2.8mΩ@10V 1.5V
DOINGTER 📄 PDF
YFW120N04AD N-Channel TO-252 40V 120A 3.2mΩ@10V 2.2V
BRCS030N04DP N-Channel TO-252 40V 150A 5mΩ@4.5V 2.5V
BLUE ROCKET 📄 PDF
DOD130N06 N-Channel TO-252 60V 130A 3.5mΩ@10V 2.5V
DOINGTER 📄 PDF
SP010N04BGTH N-Channel TO-252 100V 120A 5mΩ@10V
6.5mΩ@4.5V
1.7V
Siliup 📄 PDF