CMD019N04L MOSFET Datasheet & Specifications

N-Channel TO-252 Logic-Level Cmos
Vds Max
40V
Id Max
150A
Rds(on)
1.6mΩ@10V
Vgs(th)
2V

Quick Reference

The CMD019N04L is an N-Channel MOSFET in a TO-252 package, manufactured by Cmos. It supports a drain-source breakdown voltage of 40V and a continuous drain current of 150A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerCmosOriginal Manufacturer
PackageTO-252Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)40VMax breakdown voltage
Continuous Drain Current (Id)150AMax current handling
Power Dissipation (Pd)150WMax thermal limit
On-Resistance (Rds(on))1.6mΩ@10VResistance when turned fully on
Gate Threshold (Vgs(th))2VVoltage required to turn on
Gate Charge (Qg)60nCSwitching energy
Input Capacitance (Ciss)5.7nFInternal gate capacitance
Output Capacitance (Coss)1.2nFInternal output capacitance
Operating Temp-55℃~+150℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
BRCS030N04DP N-Channel TO-252 40V 150A 5mΩ@4.5V 2.5V
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