HGD032N04A MOSFET Datasheet & Specifications

N-Channel TO-252 Logic-Level CRMICRO
Vds Max
40V
Id Max
145A
Rds(on)
2.5mΩ@10V
Vgs(th)
2.5V

Quick Reference

The HGD032N04A is an N-Channel MOSFET in a TO-252 package, manufactured by CRMICRO. It supports a drain-source breakdown voltage of 40V and a continuous drain current of 145A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerCRMICROOriginal Manufacturer
PackageTO-252Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)40VMax breakdown voltage
Continuous Drain Current (Id)145AMax current handling
Power Dissipation (Pd)96WMax thermal limit
On-Resistance (Rds(on))2.5mΩ@10VResistance when turned fully on
Gate Threshold (Vgs(th))2.5VVoltage required to turn on
Gate Charge (Qg)63.4nC@10VSwitching energy
Input Capacitance (Ciss)3.02nFInternal gate capacitance
Output Capacitance (Coss)1.162nFInternal output capacitance
Operating Temp-55℃~+150℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
CMD019N04L N-Channel TO-252 40V 150A 1.6mΩ@10V 2V
BRCS030N04DP N-Channel TO-252 40V 150A 5mΩ@4.5V 2.5V
BLUE ROCKET 📄 PDF
CMD023N06 N-Channel TO-252 60V 160A 3.5mΩ@4.5V 3V