SP40N02HTH MOSFET Datasheet & Specifications

N-Channel TO-252 Logic-Level Siliup
Vds Max
40V
Id Max
130A
Rds(on)
2.5mΩ@10V
Vgs(th)
2.6V

Quick Reference

The SP40N02HTH is an N-Channel MOSFET in a TO-252 package, manufactured by Siliup. It supports a drain-source breakdown voltage of 40V and a continuous drain current of 130A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerSiliupOriginal Manufacturer
PackageTO-252Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)40VMax breakdown voltage
Continuous Drain Current (Id)130AMax current handling
Power Dissipation (Pd)125WMax thermal limit
On-Resistance (Rds(on))2.5mΩ@10VResistance when turned fully on
Gate Threshold (Vgs(th))2.6VVoltage required to turn on
Gate Charge (Qg)175nC@10VSwitching energy
Input Capacitance (Ciss)4.711nFInternal gate capacitance
Output Capacitance (Coss)869pFInternal output capacitance
Operating Temp-55℃~+150℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
CMD019N04L N-Channel TO-252 40V 150A 1.6mΩ@10V 2V
HGD032N04A N-Channel TO-252 40V 145A 2.5mΩ@10V 2.5V
CRMICRO 📄 PDF
BRCS030N04DP N-Channel TO-252 40V 150A 5mΩ@4.5V 2.5V
BLUE ROCKET 📄 PDF
DOD130N06 N-Channel TO-252 60V 130A 3.5mΩ@10V 2.5V
DOINGTER 📄 PDF
CMD023N06 N-Channel TO-252 60V 160A 3.5mΩ@4.5V 3V