DOD130N06 MOSFET Datasheet & Specifications
N-Channel
TO-252
Logic-Level
DOINGTER
Vds Max
60V
Id Max
130A
Rds(on)
3.5mΩ@10V
Vgs(th)
2.5V
Quick Reference
The DOD130N06 is an N-Channel MOSFET in a TO-252 package, manufactured by DOINGTER. It supports a drain-source breakdown voltage of 60V and a continuous drain current of 130A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | DOINGTER | Original Manufacturer |
| Package | TO-252 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 60V | Max breakdown voltage |
| Continuous Drain Current (Id) | 130A | Max current handling |
| Power Dissipation (Pd) | 140W | Max thermal limit |
| On-Resistance (Rds(on)) | 3.5mΩ@10V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 2.5V | Voltage required to turn on |
| Gate Charge (Qg) | 66.1nC@10V | Switching energy |
| Input Capacitance (Ciss) | 5.377nF | Internal gate capacitance |
| Output Capacitance (Coss) | 1.666nF | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |