NJD1718T4G Datasheet & Equivalents

PNP TO-252 (DPAK) General Purpose onsemi
VCEO
50V
Ic Max
2A
Pd Max
1.68W
hFE Gain
70

Quick Reference

The NJD1718T4G is a PNP bipolar junction transistor in a TO-252 (DPAK) package, manufactured by onsemi. It supports a breakdown voltage of 50V and continuous collector current of 2A. It is widely used in switching and amplification circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageTO-252 (DPAK)Physical mounting
Transistor TypeBJTBipolar Junction Transistor
CategorySingleConfiguration
Collector-Emitter Voltage (VCEO)50VMax breakdown voltage
Collector Current (Ic)2AMax current handling
Power Dissipation (Pd)1.68WMax thermal limit
DC Current Gain (hFE)70Base signal amplification ratio
Transition Frequency (fT)80MHzMax operating frequency
Saturation Voltage (VCEsat)500mVVoltage drop when fully ON
Emitter-Base Voltage (Vebo)-Max emitter-base breakdown
Collector Cutoff Current100nALeakage current when OFF
Operating Temp-65โ„ƒ~+150โ„ƒSafe junction temperature range

Equivalent Transistors & Alternatives

PartTypePackageVCEOIChFEPdManufacturer / Datasheet
2SB1201S-TL-E PNP TO-252 (DPAK) 50V 2A 100 800mW
2SA1012B(RANGE:120-270) PNP TO-252 (DPAK) 50V 2A 120 1.25W
2SB1184(RANGE:120-270) PNP TO-252 (DPAK) 50V 3A 82 1W
2DB1184Q-13 PNP TO-252 (DPAK) 50V 3A 120 1.2W
2SAR573D3TL1 PNP TO-252 (DPAK) 50V 3A 180 10W
2SB1184 PNP TO-252 (DPAK) 50V 3A 390 1W
2SA1012(RANGE:120-240) PNP TO-252 (DPAK) 50V 5A 120 1.25W
KTA1040D-Y-RTF/P PNP TO-252 (DPAK) 60V 3A 100 1W
STD2805T4 PNP TO-252 (DPAK) 60V 5A 85 15W
2SA1952 PNP TO-252 (DPAK) 60V 5A 120 1W
2SA1952TLQ PNP TO-252 (DPAK) 60V 5A 270 10W
KTA1385D-Y-RTF/P PNP TO-252 (DPAK) 60V 5A 400 15W
MJD117 PNP TO-252 (DPAK) 100V 2A 500 1.75W
NJVMJD32CT4G-VF01 PNP TO-252 (DPAK) 100V 3A 10 15W
MJD42C PNP TO-252 (DPAK) 100V 3A - 1W
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MJD253T4G PNP TO-252 (DPAK) 100V 4A 180 12.5W
MJD127 PNP TO-252 (DPAK) 100V 5A 1000 65W