MJD253T4G Datasheet & Equivalents

PNP TO-252 (DPAK) High Power onsemi
VCEO
100V
Ic Max
4A
Pd Max
12.5W
hFE Gain
180

Quick Reference

The MJD253T4G is a PNP bipolar junction transistor in a TO-252 (DPAK) package, manufactured by onsemi. It supports a breakdown voltage of 100V and continuous collector current of 4A. It is widely used in switching and amplification circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageTO-252 (DPAK)Physical mounting
Transistor TypeBJTBipolar Junction Transistor
CategorySingleConfiguration
Collector-Emitter Voltage (VCEO)100VMax breakdown voltage
Collector Current (Ic)4AMax current handling
Power Dissipation (Pd)12.5WMax thermal limit
DC Current Gain (hFE)180Base signal amplification ratio
Transition Frequency (fT)40MHzMax operating frequency
Saturation Voltage (VCEsat)600mVVoltage drop when fully ON
Emitter-Base Voltage (Vebo)7VMax emitter-base breakdown
Collector Cutoff Current100nALeakage current when OFF
Operating Temp-65โ„ƒ~+150โ„ƒSafe junction temperature range

Equivalent Transistors & Alternatives

PartTypePackageVCEOIChFEPdManufacturer / Datasheet
MJD127 PNP TO-252 (DPAK) 100V 5A 1000 65W
MJD42CT4G(MS) PNP TO-252 (DPAK) 100V 6A 75 1.25W
MJD42C PNP TO-252 (DPAK) 100V 6A 75 20W
BLUE ROCKET ๐Ÿ“„ PDF
MJD42CG PNP TO-252 (DPAK) 100V 6A 15 1.75W
MJD42C PNP TO-252 (DPAK) 100V 6A 15 1.25W
MJD42CRLG PNP TO-252 (DPAK) 100V 6A 15 1.75W
MJD42CRLG PNP TO-252 (DPAK) 100V 6A 15 1.75W
MJD127T4 PNP TO-252 (DPAK) 100V 8A 1000 20W
MJD127T4G PNP TO-252 (DPAK) 100V 8A 1000 1.75W
MJD127T4G-JSM PNP TO-252 (DPAK) 100V 8A 1000 1.75W
NJVMJD127T4G PNP TO-252 (DPAK) 100V 8A 1000 20W
MJD127T4G(MS) PNP TO-252 (DPAK) 100V 8A 12000 1.5W
MJD127 PNP TO-252 (DPAK) 100V 8A 12000 1.5W
MJD128T4G PNP TO-252 (DPAK) 120V 8A - 1.75W