MJD42CT4G(MS) Datasheet & Equivalents

PNP TO-252 (DPAK) General Purpose MSKSEMI
VCEO
100V
Ic Max
6A
Pd Max
1.25W
hFE Gain
75

Quick Reference

The MJD42CT4G(MS) is a PNP bipolar junction transistor in a TO-252 (DPAK) package, manufactured by MSKSEMI. It supports a breakdown voltage of 100V and continuous collector current of 6A. It is widely used in switching and amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerMSKSEMIOriginal Manufacturer
PackageTO-252 (DPAK)Physical mounting
Transistor TypeBJTBipolar Junction Transistor
CategorySingleConfiguration
Collector-Emitter Voltage (VCEO)100VMax breakdown voltage
Collector Current (Ic)6AMax current handling
Power Dissipation (Pd)1.25WMax thermal limit
DC Current Gain (hFE)75Base signal amplification ratio
Transition Frequency (fT)3MHzMax operating frequency
Saturation Voltage (VCEsat)1.5VVoltage drop when fully ON
Emitter-Base Voltage (Vebo)5VMax emitter-base breakdown
Collector Cutoff Current50uALeakage current when OFF
Operating Temp-55โ„ƒ~+150โ„ƒSafe junction temperature range

Equivalent Transistors & Alternatives

PartTypePackageVCEOIChFEPdManufacturer / Datasheet
MJD42C PNP TO-252 (DPAK) 100V 6A 75 20W
BLUE ROCKET ๐Ÿ“„ PDF
MJD42CG PNP TO-252 (DPAK) 100V 6A 15 1.75W
MJD42C PNP TO-252 (DPAK) 100V 6A 15 1.25W
MJD42CRLG PNP TO-252 (DPAK) 100V 6A 15 1.75W
MJD42CRLG PNP TO-252 (DPAK) 100V 6A 15 1.75W
MJD127T4 PNP TO-252 (DPAK) 100V 8A 1000 20W
MJD127T4G PNP TO-252 (DPAK) 100V 8A 1000 1.75W
MJD127T4G-JSM PNP TO-252 (DPAK) 100V 8A 1000 1.75W
NJVMJD127T4G PNP TO-252 (DPAK) 100V 8A 1000 20W
MJD127T4G(MS) PNP TO-252 (DPAK) 100V 8A 12000 1.5W
MJD127 PNP TO-252 (DPAK) 100V 8A 12000 1.5W
MJD128T4G PNP TO-252 (DPAK) 120V 8A - 1.75W