MJD127T4 Datasheet & Equivalents
PNP
TO-252 (DPAK)
High Power
ST
VCEO
100V
Ic Max
8A
Pd Max
20W
hFE Gain
1000
Quick Reference
The MJD127T4 is a PNP bipolar junction transistor in a TO-252 (DPAK) package, manufactured by ST. It supports a breakdown voltage of 100V and continuous collector current of 8A. It is widely used in switching and amplification circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | ST | Original Manufacturer |
| Package | TO-252 (DPAK) | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| Category | Single | Configuration |
| Collector-Emitter Voltage (VCEO) | 100V | Max breakdown voltage |
| Collector Current (Ic) | 8A | Max current handling |
| Power Dissipation (Pd) | 20W | Max thermal limit |
| DC Current Gain (hFE) | 1000 | Base signal amplification ratio |
| Transition Frequency (fT) | - | Max operating frequency |
| Saturation Voltage (VCEsat) | 4V | Voltage drop when fully ON |
| Emitter-Base Voltage (Vebo) | - | Max emitter-base breakdown |
| Collector Cutoff Current | 10uA | Leakage current when OFF |
| Operating Temp | - | Safe junction temperature range |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | IC | hFE | Pd | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| MJD127T4G | PNP | TO-252 (DPAK) | 100V | 8A | 1000 | 1.75W | onsemi 📄 PDF |
| MJD127T4G-JSM | PNP | TO-252 (DPAK) | 100V | 8A | 1000 | 1.75W | JSMSEMI 📄 PDF |
| NJVMJD127T4G | PNP | TO-252 (DPAK) | 100V | 8A | 1000 | 20W | onsemi 📄 PDF |
| MJD127T4G(MS) | PNP | TO-252 (DPAK) | 100V | 8A | 12000 | 1.5W | MSKSEMI 📄 PDF |
| MJD127 | PNP | TO-252 (DPAK) | 100V | 8A | 12000 | 1.5W | JSCJ 📄 PDF |
| MJD128T4G | PNP | TO-252 (DPAK) | 120V | 8A | - | 1.75W | onsemi 📄 PDF |