MJD128T4G Datasheet & Equivalents
PNP
TO-252 (DPAK)
High Power
onsemi
VCEO
120V
Ic Max
8A
Pd Max
1.75W
hFE Gain
-
Quick Reference
The MJD128T4G is a PNP bipolar junction transistor in a TO-252 (DPAK) package, manufactured by onsemi. It supports a breakdown voltage of 120V and continuous collector current of 8A. It is widely used in switching and amplification circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | onsemi | Original Manufacturer |
| Package | TO-252 (DPAK) | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| Category | Single | Configuration |
| Collector-Emitter Voltage (VCEO) | 120V | Max breakdown voltage |
| Collector Current (Ic) | 8A | Max current handling |
| Power Dissipation (Pd) | 1.75W | Max thermal limit |
| DC Current Gain (hFE) | - | Base signal amplification ratio |
| Transition Frequency (fT) | 4MHz | Max operating frequency |
| Saturation Voltage (VCEsat) | 1000@4V,4A | Voltage drop when fully ON |
| Emitter-Base Voltage (Vebo) | - | Max emitter-base breakdown |
| Collector Cutoff Current | - | Leakage current when OFF |
| Operating Temp | -65℃~+150℃@(Tj) | Safe junction temperature range |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | IC | hFE | Pd | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| No exact equivalents found in database. | |||||||