MJD127 Datasheet & Equivalents

PNP TO-252 (DPAK) High Power Minos
VCEO
100V
Ic Max
5A
Pd Max
65W
hFE Gain
1000

Quick Reference

The MJD127 is a PNP bipolar junction transistor in a TO-252 (DPAK) package, manufactured by Minos. It supports a breakdown voltage of 100V and continuous collector current of 5A. It is widely used in switching and amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerMinosOriginal Manufacturer
PackageTO-252 (DPAK)Physical mounting
Transistor TypeBJTBipolar Junction Transistor
CategorySingleConfiguration
Collector-Emitter Voltage (VCEO)100VMax breakdown voltage
Collector Current (Ic)5AMax current handling
Power Dissipation (Pd)65WMax thermal limit
DC Current Gain (hFE)1000Base signal amplification ratio
Transition Frequency (fT)-Max operating frequency
Saturation Voltage (VCEsat)2VVoltage drop when fully ON
Emitter-Base Voltage (Vebo)-Max emitter-base breakdown
Collector Cutoff Current200uALeakage current when OFF
Operating Temp-Safe junction temperature range

Equivalent Transistors & Alternatives

PartTypePackageVCEOIChFEPdManufacturer / Datasheet
MJD42CT4G(MS) PNP TO-252 (DPAK) 100V 6A 75 1.25W
MJD42C PNP TO-252 (DPAK) 100V 6A 75 20W
BLUE ROCKET ๐Ÿ“„ PDF
MJD42CG PNP TO-252 (DPAK) 100V 6A 15 1.75W
MJD42C PNP TO-252 (DPAK) 100V 6A 15 1.25W
MJD42CRLG PNP TO-252 (DPAK) 100V 6A 15 1.75W
MJD42CRLG PNP TO-252 (DPAK) 100V 6A 15 1.75W
MJD127T4 PNP TO-252 (DPAK) 100V 8A 1000 20W
MJD127T4G PNP TO-252 (DPAK) 100V 8A 1000 1.75W
MJD127T4G-JSM PNP TO-252 (DPAK) 100V 8A 1000 1.75W
NJVMJD127T4G PNP TO-252 (DPAK) 100V 8A 1000 20W
MJD127T4G(MS) PNP TO-252 (DPAK) 100V 8A 12000 1.5W
MJD128T4G PNP TO-252 (DPAK) 120V 8A - 1.75W