MJD117 Datasheet & Equivalents
PNP
TO-252 (DPAK)
General Purpose
JSCJ
VCEO
100V
Ic Max
2A
Pd Max
1.75W
hFE Gain
500
Quick Reference
The MJD117 is a PNP bipolar junction transistor in a TO-252 (DPAK) package, manufactured by JSCJ. It supports a breakdown voltage of 100V and continuous collector current of 2A. It is widely used in switching and amplification circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | JSCJ | Original Manufacturer |
| Package | TO-252 (DPAK) | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| Category | Single | Configuration |
| Collector-Emitter Voltage (VCEO) | 100V | Max breakdown voltage |
| Collector Current (Ic) | 2A | Max current handling |
| Power Dissipation (Pd) | 1.75W | Max thermal limit |
| DC Current Gain (hFE) | 500 | Base signal amplification ratio |
| Transition Frequency (fT) | 25MHz | Max operating frequency |
| Saturation Voltage (VCEsat) | - | Voltage drop when fully ON |
| Emitter-Base Voltage (Vebo) | - | Max emitter-base breakdown |
| Collector Cutoff Current | - | Leakage current when OFF |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |