MJD42C Datasheet & Equivalents
PNP
TO-252 (DPAK)
General Purpose
HXY MOSFET
VCEO
100V
Ic Max
3A
Pd Max
1W
hFE Gain
-
Quick Reference
The MJD42C is a PNP bipolar junction transistor in a TO-252 (DPAK) package, manufactured by HXY MOSFET. It supports a breakdown voltage of 100V and continuous collector current of 3A. It is widely used in switching and amplification circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | HXY MOSFET | Original Manufacturer |
| Package | TO-252 (DPAK) | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| Category | Single | Configuration |
| Collector-Emitter Voltage (VCEO) | 100V | Max breakdown voltage |
| Collector Current (Ic) | 3A | Max current handling |
| Power Dissipation (Pd) | 1W | Max thermal limit |
| DC Current Gain (hFE) | - | Base signal amplification ratio |
| Transition Frequency (fT) | 50MHz | Max operating frequency |
| Saturation Voltage (VCEsat) | 500mV@3A,0.375A | Voltage drop when fully ON |
| Emitter-Base Voltage (Vebo) | 6V | Max emitter-base breakdown |
| Collector Cutoff Current | 100nA | Leakage current when OFF |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | IC | hFE | Pd | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| NJVMJD32CT4G-VF01 | PNP | TO-252 (DPAK) | 100V | 3A | 10 | 15W | onsemi 📄 PDF |
| MJD253T4G | PNP | TO-252 (DPAK) | 100V | 4A | 180 | 12.5W | onsemi 📄 PDF |
| MJD127 | PNP | TO-252 (DPAK) | 100V | 5A | 1000 | 65W | Minos 📄 PDF |
| MJD42CG | PNP | TO-252 (DPAK) | 100V | 6A | 15 | 1.75W | onsemi 📄 PDF |
| MJD42CRLG | PNP | TO-252 (DPAK) | 100V | 6A | 15 | 1.75W | JSMSEMI 📄 PDF |
| MJD42CRLG | PNP | TO-252 (DPAK) | 100V | 6A | 15 | 1.75W | onsemi 📄 PDF |
| MJD42CT4G(MS) | PNP | TO-252 (DPAK) | 100V | 6A | 75 | 1.25W | MSKSEMI 📄 PDF |