MMSTA05-7-F Datasheet & Equivalents

NPN SOT-323 General Purpose DIODES
VCEO
60V
Ic Max
500mA
Pd Max
200mW
hFE Gain
100
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Quick Reference

The MMSTA05-7-F is a NPN bipolar junction transistor in a SOT-323 package, manufactured by DIODES. It supports a breakdown voltage of 60V and continuous collector current of 500mA. It is widely used in switching and amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerDIODESOriginal Manufacturer
PackageSOT-323Physical mounting
Transistor TypeBJTBipolar Junction Transistor
CategorySingleConfiguration
Collector-Emitter Voltage (VCEO)60VMax breakdown voltage
Collector Current (Ic)500mAMax current handling
Power Dissipation (Pd)200mWMax thermal limit
DC Current Gain (hFE)100Base signal amplification ratio
Transition Frequency (fT)100MHzMax operating frequency
Saturation Voltage (VCEsat)250mVVoltage drop when fully ON
Emitter-Base Voltage (Vebo)4VMax emitter-base breakdown
Collector Cutoff Current100nALeakage current when OFF
Operating Temp-55℃~+150℃Safe junction temperature range

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NPN Bipolar Transistors High-Frequency NPN BJTs SOT-323 NPN BJTs