2SC5876T106Q Datasheet & Equivalents

NPN SOT-323 General Purpose ROHM
VCEO
60V
Ic Max
500mA
Pd Max
200mW
hFE Gain
120
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Quick Reference

The 2SC5876T106Q is a NPN bipolar junction transistor in a SOT-323 package, manufactured by ROHM. It supports a breakdown voltage of 60V and continuous collector current of 500mA. It is widely used in switching and amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerROHMOriginal Manufacturer
PackageSOT-323Physical mounting
Transistor TypeBJTBipolar Junction Transistor
CategorySingleConfiguration
Collector-Emitter Voltage (VCEO)60VMax breakdown voltage
Collector Current (Ic)500mAMax current handling
Power Dissipation (Pd)200mWMax thermal limit
DC Current Gain (hFE)120Base signal amplification ratio
Transition Frequency (fT)300MHzMax operating frequency
Saturation Voltage (VCEsat)-Voltage drop when fully ON
Emitter-Base Voltage (Vebo)-Max emitter-base breakdown
Collector Cutoff Current-Leakage current when OFF
Operating Temp-55℃~+150℃Safe junction temperature range

Equivalent Transistors & Alternatives

PartTypePackageVCEOIChFEPdManufacturer / Datasheet
2SC5876T106R NPN SOT-323 60V 500mA 120 200mW
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DSS4160U-7 NPN SOT-323 65V 500mA 250 200mW
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BC817-40W NPN SOT-323 80V 500mA 100 200mW
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NPN Bipolar Transistors High-Frequency NPN BJTs SOT-323 NPN BJTs