MMSTA06Q-7-F Datasheet & Equivalents
NPN
SOT-323
General Purpose
DIODES
VCEO
80V
Ic Max
500mA
Pd Max
200mW
hFE Gain
100
Quick Reference
The MMSTA06Q-7-F is a NPN bipolar junction transistor in a SOT-323 package, manufactured by DIODES. It supports a breakdown voltage of 80V and continuous collector current of 500mA. It is widely used in switching and amplification circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | DIODES | Original Manufacturer |
| Package | SOT-323 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| Category | Single | Configuration |
| Collector-Emitter Voltage (VCEO) | 80V | Max breakdown voltage |
| Collector Current (Ic) | 500mA | Max current handling |
| Power Dissipation (Pd) | 200mW | Max thermal limit |
| DC Current Gain (hFE) | 100 | Base signal amplification ratio |
| Transition Frequency (fT) | 100MHz | Max operating frequency |
| Saturation Voltage (VCEsat) | - | Voltage drop when fully ON |
| Emitter-Base Voltage (Vebo) | - | Max emitter-base breakdown |
| Collector Cutoff Current | - | Leakage current when OFF |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | IC | hFE | Pd | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| MMSTA06-7-F | NPN | SOT-323 | 80V | 500mA | 100 | 200mW | DIODES 📄 PDF |
| MMST5551(RANGE:100-300) | NPN | SOT-323 | 160V | 600mA | 100 | 200mW | JSCJ 📄 PDF |
| BC816-25WX-HXY | NPN | SOT-323 | 160V | 600mA | 300 | 200mW | HXY MOSFET 📄 PDF |
| MMBTA06WT1G-HXY | NPN | SOT-323 | 160V | 600mA | 300 | 200mW | HXY MOSFET 📄 PDF |
| MMST5551 | NPN | SOT-323 | 160V | 600mA | 300 | 200mW | R+O 📄 PDF |
| MMST5551-JSM | NPN | SOT-323 | 160V | 600mA | 300 | 200mW | JSMSEMI 📄 PDF |