PBSS4160U,115 Datasheet & Equivalents
NPN
SOT-323
General Purpose
Nexperia
VCEO
60V
Ic Max
750mA
Pd Max
415mW
hFE Gain
200
Quick Reference
The PBSS4160U,115 is a NPN bipolar junction transistor in a SOT-323 package, manufactured by Nexperia. It supports a breakdown voltage of 60V and continuous collector current of 750mA. It is widely used in switching and amplification circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | Nexperia | Original Manufacturer |
| Package | SOT-323 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| Category | Single | Configuration |
| Collector-Emitter Voltage (VCEO) | 60V | Max breakdown voltage |
| Collector Current (Ic) | 750mA | Max current handling |
| Power Dissipation (Pd) | 415mW | Max thermal limit |
| DC Current Gain (hFE) | 200 | Base signal amplification ratio |
| Transition Frequency (fT) | 220MHz | Max operating frequency |
| Saturation Voltage (VCEsat) | - | Voltage drop when fully ON |
| Emitter-Base Voltage (Vebo) | - | Max emitter-base breakdown |
| Collector Cutoff Current | - | Leakage current when OFF |
| Operating Temp | -65℃~+150℃ | Safe junction temperature range |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | IC | hFE | Pd | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| DSS4160U-7 | NPN | SOT-323 | 60V | 1A | 100 | 400mW | DIODES 📄 PDF |
| ZUMT491 | NPN | SOT-323 | 60V | 1A | 100 | 250mW | JSCJ 📄 PDF |