2SC5876T106R Datasheet & Equivalents

NPN SOT-323 General Purpose ROHM
VCEO
60V
Ic Max
500mA
Pd Max
200mW
hFE Gain
120
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Quick Reference

The 2SC5876T106R is a NPN bipolar junction transistor in a SOT-323 package, manufactured by ROHM. It supports a breakdown voltage of 60V and continuous collector current of 500mA. It is widely used in switching and amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerROHMOriginal Manufacturer
PackageSOT-323Physical mounting
Transistor TypeBJTBipolar Junction Transistor
CategorySingleConfiguration
Collector-Emitter Voltage (VCEO)60VMax breakdown voltage
Collector Current (Ic)500mAMax current handling
Power Dissipation (Pd)200mWMax thermal limit
DC Current Gain (hFE)120Base signal amplification ratio
Transition Frequency (fT)300MHzMax operating frequency
Saturation Voltage (VCEsat)150mVVoltage drop when fully ON
Emitter-Base Voltage (Vebo)-Max emitter-base breakdown
Collector Cutoff Current1uALeakage current when OFF
Operating Temp-Safe junction temperature range

Equivalent Transistors & Alternatives

PartTypePackageVCEOIChFEPdManufacturer / Datasheet
2SC5876T106Q NPN SOT-323 60V 500mA 120 200mW
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MMSTA05-7-F NPN SOT-323 60V 500mA 100 200mW
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DSS4160U-7 NPN SOT-323 65V 500mA 250 200mW
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BC817-40W NPN SOT-323 80V 500mA 100 200mW
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NPN Bipolar Transistors High-Frequency NPN BJTs SOT-323 NPN BJTs