MMBTA42 Datasheet & Equivalents

NPN SOT-23 General Purpose Jingdao Microelectronics
VCEO
300V
Ic Max
300mA
Pd Max
350mW
hFE Gain
60

Quick Reference

The MMBTA42 is a NPN bipolar junction transistor in a SOT-23 package, manufactured by Jingdao Microelectronics. It supports a breakdown voltage of 300V and continuous collector current of 300mA. It is widely used in switching and amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerJingdao MicroelectronicsOriginal Manufacturer
PackageSOT-23Physical mounting
Transistor TypeBJTBipolar Junction Transistor
CategorySingleConfiguration
Collector-Emitter Voltage (VCEO)300VMax breakdown voltage
Collector Current (Ic)300mAMax current handling
Power Dissipation (Pd)350mWMax thermal limit
DC Current Gain (hFE)60Base signal amplification ratio
Transition Frequency (fT)50MHzMax operating frequency
Saturation Voltage (VCEsat)-Voltage drop when fully ON
Emitter-Base Voltage (Vebo)-Max emitter-base breakdown
Collector Cutoff Current-Leakage current when OFF
Operating Temp-55โ„ƒ~+150โ„ƒSafe junction temperature range

Equivalent Transistors & Alternatives

PartTypePackageVCEOIChFEPdManufacturer / Datasheet
MMBT6517 NPN SOT-23 300V 300mA 60 350mW
MMBTA42 1D NPN SOT-23 300V 300mA 100 350mW
MMBTA42(RANGE:100-200) NPN SOT-23 300V 300mA 100 350mW
MMBTA42-6AF NPN SOT-23 300V 300mA 200 350mW
MMBTA42-MS NPN SOT-23 300V 300mA 200 350mW
S-MMBTA42LT1G NPN SOT-23 300V 500mA 60 350mW
FMMT497TA NPN SOT-23 300V 500mA 80 500mW
MMBTA42-7-F NPN SOT-23 300V 500mA 40 300mW
MMBTA42Q-7-F NPN SOT-23 300V 500mA 40 300mW
LMBTA42LT1G NPN SOT-23 300V 500mA 25 225mW
MMBTA42LT1G NPN SOT-23 300V 500mA 25 225mW
SMMBTA42LT1G NPN SOT-23 300V 500mA 25 225mW
SMMBTA42LT3G NPN SOT-23 300V 500mA 25 225mW
CMPTA42E TR PBFREE NPN SOT-23 350V 500mA 50 350mW
DN350T05-7 NPN SOT-23 350V 500mA 30 300mW
MMBT6517BEC NPN SOT-23 350V 500mA 200 200mW
MMBTA44_R1_00001 NPN SOT-23 400V 300mA 50 225mW
MMBTA44 NPN SOT-23 400V 300mA 200 350mW
STR1550 NPN SOT-23 500V 500mA 100 500mW