MMBTA42 Datasheet & Equivalents

NPN SOT-23 General Purpose ALJ
VCEO
300V
Ic Max
300mA
Pd Max
350mW
hFE Gain
200

Quick Reference

The MMBTA42 is a NPN bipolar junction transistor in a SOT-23 package, manufactured by ALJ. It supports a breakdown voltage of 300V and continuous collector current of 300mA. It is widely used in switching and amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerALJOriginal Manufacturer
PackageSOT-23Physical mounting
Transistor TypeBJTBipolar Junction Transistor
CategorySingleConfiguration
Collector-Emitter Voltage (VCEO)300VMax breakdown voltage
Collector Current (Ic)300mAMax current handling
Power Dissipation (Pd)350mWMax thermal limit
DC Current Gain (hFE)200Base signal amplification ratio
Transition Frequency (fT)50MHzMax operating frequency
Saturation Voltage (VCEsat)200mVVoltage drop when fully ON
Emitter-Base Voltage (Vebo)5VMax emitter-base breakdown
Collector Cutoff Current250nALeakage current when OFF
Operating Temp-Safe junction temperature range

Equivalent Transistors & Alternatives

PartTypePackageVCEOIChFEPdManufacturer / Datasheet
MMBTA42-6AF NPN SOT-23 300V 300mA 200 350mW
MMBTA42-MS NPN SOT-23 300V 300mA 200 350mW
MMBTA42 1D NPN SOT-23 300V 300mA 100 350mW
MMBTA42(RANGE:100-200) NPN SOT-23 300V 300mA 100 350mW
MMBT6517 NPN SOT-23 300V 300mA 60 350mW
FMMT497TA NPN SOT-23 300V 500mA 80 500mW
S-MMBTA42LT1G NPN SOT-23 300V 500mA 60 350mW
MMBTA42-7-F NPN SOT-23 300V 500mA 40 300mW
MMBTA42Q-7-F NPN SOT-23 300V 500mA 40 300mW
LMBTA42LT1G NPN SOT-23 300V 500mA 25 225mW
MMBTA42LT1G NPN SOT-23 300V 500mA 25 225mW
SMMBTA42LT1G NPN SOT-23 300V 500mA 25 225mW
SMMBTA42LT3G NPN SOT-23 300V 500mA 25 225mW
MMBT6517BEC NPN SOT-23 350V 500mA 200 200mW
CMPTA42E TR PBFREE NPN SOT-23 350V 500mA 50 350mW
DN350T05-7 NPN SOT-23 350V 500mA 30 300mW
MMBTA44 NPN SOT-23 400V 300mA 200 350mW
MMBTA44_R1_00001 NPN SOT-23 400V 300mA 50 225mW
STR1550 NPN SOT-23 500V 500mA 100 500mW