MJD41C(MS) Transistor Datasheet & Specifications

NPN BJT | MSKSEMI

NPNTO-252General Purpose
VCEO
100V
Ic Max
9A
Pd Max
1.25W
Gain
75

Quick Reference

The MJD41C(MS) is a NPN bipolar transistor in a TO-252 package. This datasheet provides complete specifications including 100V breakdown voltage and 9A continuous collector current. Download the MJD41C(MS) datasheet PDF below for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerMSKSEMIOriginal Manufacturer
PackageTO-252Physical mounting
VCEO100VBreakdown voltage
IC Max9ACollector current
Pd Max1.25WPower dissipation
Gain75DC current gain
Frequency-Transition speed
VCEsat-Saturation voltage
Vebo3MHzEmitter-Base voltage
Temp-55โ„ƒ~+150โ„ƒOperating temp

Direct Replacements & Alternatives

PartTypePackageVCEOIcPd
MJD44H11T4GNPNTO-252(DPAK)80V8A20W
ZXT1053AKTCNPNTO-25275V5A4W
MJD44H11NPNTO-252(DPAK)80V8A20W
MJD31CNPNTO-252-2L100V3A1.25W
MJD31CQNPNTO-252100V3A1.6W
2SD1733TLRNPNTO-25280V1A10W
2SCR574D3TL1NPNTO-25280V2A10W
MJD44H11T4G-DWNPNTO-25280V8A20W
2SD1816L-R-TN3-RNPNTO-252100V4A1W
BRMJD112QNPNTO-252100V2A20W