BRMJD112Q Transistor Datasheet & Specifications
NPNTO-252General Purpose
VCEO
100V
Ic Max
2A
Pd Max
20W
Gain
1000
Quick Reference
The BRMJD112Q is a NPN bipolar transistor in a TO-252 package. This datasheet provides complete specifications including 100V breakdown voltage and 2A continuous collector current. Download the BRMJD112Q datasheet PDF below for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | BLUE ROCKET | Original Manufacturer |
| Package | TO-252 | Physical mounting |
| VCEO | 100V | Breakdown voltage |
| IC Max | 2A | Collector current |
| Pd Max | 20W | Power dissipation |
| Gain | 1000 | DC current gain |
| Frequency | 25MHz | Transition speed |
| VCEsat | 3V | Saturation voltage |
| Vebo | 5V | Emitter-Base voltage |
| Temp | - | Operating temp |
Direct Replacements & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|---|---|---|---|---|
| MJD44H11T4G | NPN | TO-252(DPAK) | 80V | 8A | 20W |
| ZXT1053AKTC | NPN | TO-252 | 75V | 5A | 4W |
| MJD44H11 | NPN | TO-252(DPAK) | 80V | 8A | 20W |
| MJD31C | NPN | TO-252-2L | 100V | 3A | 1.25W |
| MJD31CQ | NPN | TO-252 | 100V | 3A | 1.6W |
| 2SD1733TLR | NPN | TO-252 | 80V | 1A | 10W |
| 2SCR574D3TL1 | NPN | TO-252 | 80V | 2A | 10W |
| MJD44H11T4G-DW | NPN | TO-252 | 80V | 8A | 20W |
| 2SD1816L-R-TN3-R | NPN | TO-252 | 100V | 4A | 1W |
| MJD122(MS) | NPN | TO-252 | 100V | 6A | 1.25W |