MJD31CQ Transistor Datasheet & Specifications
NPNTO-252General Purpose
VCEO
100V
Ic Max
3A
Pd Max
1.6W
Gain
10
Quick Reference
The MJD31CQ is a NPN bipolar transistor in a TO-252 package. This datasheet provides complete specifications including 100V breakdown voltage and 3A continuous collector current. Download the MJD31CQ datasheet PDF below for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | YANGJIE | Original Manufacturer |
| Package | TO-252 | Physical mounting |
| VCEO | 100V | Breakdown voltage |
| IC Max | 3A | Collector current |
| Pd Max | 1.6W | Power dissipation |
| Gain | 10 | DC current gain |
| Frequency | 3MHz | Transition speed |
| VCEsat | 1.2V | Saturation voltage |
| Vebo | 5V | Emitter-Base voltage |
| Temp | -55℃~+150℃ | Operating temp |
Direct Replacements & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|---|---|---|---|---|
| MJD44H11T4G | NPN | TO-252(DPAK) | 80V | 8A | 20W |
| ZXT1053AKTC | NPN | TO-252 | 75V | 5A | 4W |
| MJD44H11 | NPN | TO-252(DPAK) | 80V | 8A | 20W |
| MJD31C | NPN | TO-252-2L | 100V | 3A | 1.25W |
| 2SD1733TLR | NPN | TO-252 | 80V | 1A | 10W |
| 2SCR574D3TL1 | NPN | TO-252 | 80V | 2A | 10W |
| MJD44H11T4G-DW | NPN | TO-252 | 80V | 8A | 20W |
| 2SD1816L-R-TN3-R | NPN | TO-252 | 100V | 4A | 1W |
| BRMJD112Q | NPN | TO-252 | 100V | 2A | 20W |
| MJD122(MS) | NPN | TO-252 | 100V | 6A | 1.25W |