MJD44H11T4G Transistor Datasheet & Specifications

NPN BJT | onsemi

NPNTO-252(DPAK)General Purpose
VCEO
80V
Ic Max
8A
Pd Max
20W
Gain
60

Quick Reference

The MJD44H11T4G is a NPN bipolar transistor in a TO-252(DPAK) package. This datasheet provides complete specifications including 80V breakdown voltage and 8A continuous collector current. Download the MJD44H11T4G datasheet PDF below for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageTO-252(DPAK)Physical mounting
VCEO80VBreakdown voltage
IC Max8ACollector current
Pd Max20WPower dissipation
Gain60DC current gain
Frequency85MHzTransition speed
VCEsat1VSaturation voltage
Vebo5VEmitter-Base voltage
Temp-55โ„ƒ~+150โ„ƒOperating temp

Direct Replacements & Alternatives

PartTypePackageVCEOIcPd
NSS1C301ET4GNPNTO-252(DPAK)100V3A2.1W
MJD31CGNPNTO-252(DPAK)100V3A15W
MJD31CRLGNPNTO-252(DPAK)100V3A15W
NJVMJD31CT4GNPNTO-252(DPAK)100V3A15W
MJD31CT4GNPNTO-252(DPAK)100V3A15W
MJD41CQ-13NPNTO-252(DPAK)100V6A2.7W
MJD44H11NPNTO-252(DPAK)80V8A20W
STD1802T4NPNTO-252(DPAK)60V3A15W
MJD122T4GNPNTO-252(DPAK)100V8A1.75W
MJD31CUQ-13NPNTO-252(DPAK)100V3A1.6W