NSS1C301ET4G Transistor Datasheet & Specifications

NPN BJT | onsemi

NPNTO-252(DPAK)General Purpose
VCEO
100V
Ic Max
3A
Pd Max
2.1W
Gain
120

Quick Reference

The NSS1C301ET4G is a NPN bipolar transistor in a TO-252(DPAK) package. This datasheet provides complete specifications including 100V breakdown voltage and 3A continuous collector current. Download the NSS1C301ET4G datasheet PDF below for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageTO-252(DPAK)Physical mounting
VCEO100VBreakdown voltage
IC Max3ACollector current
Pd Max2.1WPower dissipation
Gain120DC current gain
Frequency120MHzTransition speed
VCEsat250mVSaturation voltage
Vebo6VEmitter-Base voltage
Temp-65โ„ƒ~+150โ„ƒOperating temp

Direct Replacements & Alternatives

PartTypePackageVCEOIcPd
MJD44H11T4GNPNTO-252(DPAK)80V8A20W
MJD31CGNPNTO-252(DPAK)100V3A15W
MJD31CRLGNPNTO-252(DPAK)100V3A15W
NJVMJD31CT4GNPNTO-252(DPAK)100V3A15W
MJD31CT4GNPNTO-252(DPAK)100V3A15W
MJD41CQ-13NPNTO-252(DPAK)100V6A2.7W
MJD44H11NPNTO-252(DPAK)80V8A20W
MJD122T4GNPNTO-252(DPAK)100V8A1.75W
MJD31CUQ-13NPNTO-252(DPAK)100V3A1.6W