MJD122T4G Transistor Datasheet & Specifications

NPN BJT | onsemi

NPNTO-252(DPAK)General Purpose
VCEO
100V
Ic Max
8A
Pd Max
1.75W
Gain
1000

Quick Reference

The MJD122T4G is a NPN bipolar transistor in a TO-252(DPAK) package. This datasheet provides complete specifications including 100V breakdown voltage and 8A continuous collector current. Download the MJD122T4G datasheet PDF below for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageTO-252(DPAK)Physical mounting
VCEO100VBreakdown voltage
IC Max8ACollector current
Pd Max1.75WPower dissipation
Gain1000DC current gain
Frequency4MHzTransition speed
VCEsat4VSaturation voltage
Vebo-Emitter-Base voltage
Temp-65โ„ƒ~+150โ„ƒ@(Tj)Operating temp

Direct Replacements & Alternatives

PartTypePackageVCEOIcPd
NSS1C301ET4GNPNTO-252(DPAK)100V3A2.1W
MJD44H11T4GNPNTO-252(DPAK)80V8A20W
MJD31CGNPNTO-252(DPAK)100V3A15W
MJD31CRLGNPNTO-252(DPAK)100V3A15W
NJVMJD31CT4GNPNTO-252(DPAK)100V3A15W
MJD31CT4GNPNTO-252(DPAK)100V3A15W
MJD41CQ-13NPNTO-252(DPAK)100V6A2.7W
MJD44H11NPNTO-252(DPAK)80V8A20W
MJD31CUQ-13NPNTO-252(DPAK)100V3A1.6W