MJD31C Transistor Datasheet & Specifications
NPNTO-252-2LGeneral Purpose
VCEO
100V
Ic Max
3A
Pd Max
1.25W
Gain
75
Quick Reference
The MJD31C is a NPN bipolar transistor in a TO-252-2L package. This datasheet provides complete specifications including 100V breakdown voltage and 3A continuous collector current. Download the MJD31C datasheet PDF below for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | HXY MOSFET | Original Manufacturer |
| Package | TO-252-2L | Physical mounting |
| VCEO | 100V | Breakdown voltage |
| IC Max | 3A | Collector current |
| Pd Max | 1.25W | Power dissipation |
| Gain | 75 | DC current gain |
| Frequency | - | Transition speed |
| VCEsat | - | Saturation voltage |
| Vebo | 3MHz | Emitter-Base voltage |
| Temp | -55℃~+150℃ | Operating temp |