MJD112 Transistor Datasheet & Specifications
NPNTO-252-2LGeneral Purpose
VCEO
100V
Ic Max
2A
Pd Max
1W
Gain
12000
Quick Reference
The MJD112 is a NPN bipolar transistor in a TO-252-2L package. This datasheet provides complete specifications including 100V breakdown voltage and 2A continuous collector current. Download the MJD112 datasheet PDF below for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | JSCJ | Original Manufacturer |
| Package | TO-252-2L | Physical mounting |
| VCEO | 100V | Breakdown voltage |
| IC Max | 2A | Collector current |
| Pd Max | 1W | Power dissipation |
| Gain | 12000 | DC current gain |
| Frequency | 25MHz | Transition speed |
| VCEsat | 3V@4A,40mA | Saturation voltage |
| Vebo | - | Emitter-Base voltage |
| Temp | - | Operating temp |