IRF610PBF MOSFET Datasheet & Specifications

N-Channel TO-220AB Standard Power VISHAY
Vds Max
200V
Id Max
3.3A
Rds(on)
1.5ฮฉ@10V
Vgs(th)
4V

Quick Reference

The IRF610PBF is an N-Channel MOSFET in a TO-220AB package, manufactured by VISHAY. It supports a drain-source breakdown voltage of 200V and a continuous drain current of 3.3A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerVISHAYOriginal Manufacturer
PackageTO-220ABPhysical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)200VMax breakdown voltage
Continuous Drain Current (Id)3.3AMax current handling
Power Dissipation (Pd)36WMax thermal limit
On-Resistance (Rds(on))1.5ฮฉ@10VResistance when turned fully on
Gate Threshold (Vgs(th))4VVoltage required to turn on
Gate Charge (Qg)8.2nC@10VSwitching energy
Input Capacitance (Ciss)140pFInternal gate capacitance
Output Capacitance (Coss)53pFInternal output capacitance
Operating Temp-55โ„ƒ~+150โ„ƒSafe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
IXTP60N20T N-Channel TO-220AB 200V 60A 32mฮฉ@10V 3V
Littelfuse/IXYS ๐Ÿ“„ PDF
CS60N20A8R N-Channel TO-220AB 200V 60A 39mฮฉ@10V 4V
IRF640NPBF N-Channel TO-220AB 200V 18A 150mฮฉ@10V 4V
Infineon ๐Ÿ“„ PDF
IRL640PBF N-Channel TO-220AB 200V 17A 270mฮฉ@4V 2V
IRF630NPBF N-Channel TO-220AB 200V 9.3A 300mฮฉ@10V 4V
Infineon ๐Ÿ“„ PDF
IRL630PBF N-Channel TO-220AB 200V 5.7A 400mฮฉ@5V 2V
IRF740PBF N-Channel TO-220AB 400V 10A 550mฮฉ@10V 4V
IRF730PBF N-Channel TO-220AB 400V 5.5A 1ฮฉ@10V 2V
IRFB13N50APBF N-Channel TO-220AB 500V 14A 450mฮฉ@10V 4V
SIHP12N50C-E3 N-Channel TO-220AB 500V 7.5A 555mฮฉ@10V 3V
IRF840PBF N-Channel TO-220AB 500V 8A 850mฮฉ@10V 4V
IRF830PbF N-Channel TO-220AB 500V 4.5A 1.5ฮฉ@10V 4V
IRFBC30APBF N-Channel TO-220AB 600V 3.6A 2.2ฮฉ@10V 4.5V
IRFBE30PBF N-Channel TO-220AB 800V 4.1A 3ฮฉ@10V 2V