IRFBC30APBF MOSFET Datasheet & Specifications

N-Channel TO-220AB High-Voltage VISHAY
Vds Max
600V
Id Max
3.6A
Rds(on)
2.2ฮฉ@10V
Vgs(th)
4.5V

Quick Reference

The IRFBC30APBF is an N-Channel MOSFET in a TO-220AB package, manufactured by VISHAY. It supports a drain-source breakdown voltage of 600V and a continuous drain current of 3.6A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerVISHAYOriginal Manufacturer
PackageTO-220ABPhysical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)600VMax breakdown voltage
Continuous Drain Current (Id)3.6AMax current handling
Power Dissipation (Pd)74WMax thermal limit
On-Resistance (Rds(on))2.2ฮฉ@10VResistance when turned fully on
Gate Threshold (Vgs(th))4.5VVoltage required to turn on
Gate Charge (Qg)23nC@10VSwitching energy
Input Capacitance (Ciss)510pFInternal gate capacitance
Output Capacitance (Coss)70pFInternal output capacitance
Operating Temp-55โ„ƒ~+150โ„ƒSafe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
IRFBE30PBF N-Channel TO-220AB 800V 4.1A 3ฮฉ@10V 2V