IRF630NPBF MOSFET Datasheet & Specifications

N-Channel TO-220AB Standard Power Infineon
Vds Max
200V
Id Max
9.3A
Rds(on)
300mΩ@10V
Vgs(th)
4V

Quick Reference

The IRF630NPBF is an N-Channel MOSFET in a TO-220AB package, manufactured by Infineon. It supports a drain-source breakdown voltage of 200V and a continuous drain current of 9.3A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerInfineonOriginal Manufacturer
PackageTO-220ABPhysical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)200VMax breakdown voltage
Continuous Drain Current (Id)9.3AMax current handling
Power Dissipation (Pd)82WMax thermal limit
On-Resistance (Rds(on))300mΩ@10VResistance when turned fully on
Gate Threshold (Vgs(th))4VVoltage required to turn on
Gate Charge (Qg)35nCSwitching energy
Input Capacitance (Ciss)575pFInternal gate capacitance
Output Capacitance (Coss)-Internal output capacitance
Operating Temp-55℃~+175℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

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IXTP60N20T N-Channel TO-220AB 200V 60A 32mΩ@10V 3V
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IRFB13N50APBF N-Channel TO-220AB 500V 14A 450mΩ@10V 4V
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