IRF640NPBF MOSFET Datasheet & Specifications
N-Channel
TO-220AB
Standard Power
Infineon
Vds Max
200V
Id Max
18A
Rds(on)
150mΩ@10V
Vgs(th)
4V
Quick Reference
The IRF640NPBF is an N-Channel MOSFET in a TO-220AB package, manufactured by Infineon. It supports a drain-source breakdown voltage of 200V and a continuous drain current of 18A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | Infineon | Original Manufacturer |
| Package | TO-220AB | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 200V | Max breakdown voltage |
| Continuous Drain Current (Id) | 18A | Max current handling |
| Power Dissipation (Pd) | 150W | Max thermal limit |
| On-Resistance (Rds(on)) | 150mΩ@10V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 4V | Voltage required to turn on |
| Gate Charge (Qg) | 67nC@10V | Switching energy |
| Input Capacitance (Ciss) | 1.16nF | Internal gate capacitance |
| Output Capacitance (Coss) | 185pF | Internal output capacitance |
| Operating Temp | -55℃~+175℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| IXTP60N20T | N-Channel | TO-220AB | 200V | 60A | 32mΩ@10V | 3V | Littelfuse/IXYS 📄 PDF |
| CS60N20A8R | N-Channel | TO-220AB | 200V | 60A | 39mΩ@10V | 4V | CRMICRO 📄 PDF |