IRL630PBF MOSFET Datasheet & Specifications

N-Channel TO-220AB Logic-Level VISHAY
Vds Max
200V
Id Max
5.7A
Rds(on)
400mΩ@5V
Vgs(th)
2V

Quick Reference

The IRL630PBF is an N-Channel MOSFET in a TO-220AB package, manufactured by VISHAY. It supports a drain-source breakdown voltage of 200V and a continuous drain current of 5.7A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerVISHAYOriginal Manufacturer
PackageTO-220ABPhysical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)200VMax breakdown voltage
Continuous Drain Current (Id)5.7AMax current handling
Power Dissipation (Pd)74WMax thermal limit
On-Resistance (Rds(on))400mΩ@5VResistance when turned fully on
Gate Threshold (Vgs(th))2VVoltage required to turn on
Gate Charge (Qg)40nC@10VSwitching energy
Input Capacitance (Ciss)1.1nFInternal gate capacitance
Output Capacitance (Coss)220pFInternal output capacitance
Operating Temp-55℃~+150℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
IRL640PBF N-Channel TO-220AB 200V 17A 270mΩ@4V 2V
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