IPW65R150CFD MOSFET Datasheet & Specifications

N-Channel TO-247-3 High-Voltage Infineon
Vds Max
650V
Id Max
22.4A
Rds(on)
135mฮฉ@10V
Vgs(th)
4V

Quick Reference

The IPW65R150CFD is an N-Channel MOSFET in a TO-247-3 package, manufactured by Infineon. It supports a drain-source breakdown voltage of 650V and a continuous drain current of 22.4A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerInfineonOriginal Manufacturer
PackageTO-247-3Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)650VMax breakdown voltage
Continuous Drain Current (Id)22.4AMax current handling
Power Dissipation (Pd)195.3WMax thermal limit
On-Resistance (Rds(on))135mฮฉ@10VResistance when turned fully on
Gate Threshold (Vgs(th))4VVoltage required to turn on
Gate Charge (Qg)86nC@10VSwitching energy
Input Capacitance (Ciss)2.34nFInternal gate capacitance
Output Capacitance (Coss)110pFInternal output capacitance
Operating Temp-55โ„ƒ~+150โ„ƒSafe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
CI30N65SM N-Channel TO-247-3 650V 30A 65mฮฉ@20V 2.3V
GC3M0120090D N-Channel TO-247-3 900V 23A 120mฮฉ@15V 2.1V
CI90N120SM N-Channel TO-247-3 1.2kV 90A 27mฮฉ@20V 2.5V
GC3M0032120D N-Channel TO-247-3 1.2kV 63A 32mฮฉ@15V 2.5V
GC3M0040120D N-Channel TO-247-3 1.2kV 66A 40mฮฉ@15V 2.7V
GC2M0080120D1 N-Channel TO-247-3 1.2kV 34A 80mฮฉ 4V
GC2M0040120D N-Channel TO-247-3 1.2kV 55A 80mฮฉ@20V 3.2V
M2M-0080-120D N-Channel TO-247-3 1.2kV 28A 98mฮฉ 4V
NTHL080N120SC1 N-Channel TO-247-3 1.2kV 31A 110mฮฉ 4.3V
CI72N170SM N-Channel TO-247-3 1.7kV 72A - 4V