IPW65R150CFD MOSFET Datasheet & Equivalents

N-Channel TO-247-3 High-Voltage Infineon
Vds Max
650V
Id Max
22.4A
Rds(on)
135mΩ@10V
Vgs(th)
4V

Quick Reference

The IPW65R150CFD is an N-Channel MOSFET in a TO-247-3 package, manufactured by Infineon. It supports a drain-source breakdown voltage of 650V and a continuous drain current of 22.4A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerInfineonOriginal Manufacturer
PackageTO-247-3Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)650VMax breakdown voltage
Continuous Drain Current (Id)22.4AMax current handling
Power Dissipation (Pd)195.3WMax thermal limit
On-Resistance (Rds(on))135mΩ@10VResistance when turned fully on
Gate Threshold (Vgs(th))4VVoltage required to turn on
Gate Charge (Qg)86nC@10VSwitching energy
Input Capacitance (Ciss)2.34nFInternal gate capacitance
Output Capacitance (Coss)110pFInternal output capacitance
Operating Temp-55℃~+150℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
CI30N65SM N-Channel TO-247-3 650V 30A 65mΩ@20V 2.3V
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GC3M0120090D N-Channel TO-247-3 900V 23A 120mΩ@15V 2.1V
SUPSiC 📄 PDF
CI90N120SM N-Channel TO-247-3 1.2kV 90A 27mΩ@20V 2.5V
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GC3M0032120D N-Channel TO-247-3 1.2kV 63A 32mΩ@15V 2.5V
SUPSiC 📄 PDF
GC3M0040120D N-Channel TO-247-3 1.2kV 66A 40mΩ@15V 2.7V
SUPSiC 📄 PDF
GC2M0080120D1 N-Channel TO-247-3 1.2kV 34A 80mΩ 4V
SUPSiC 📄 PDF
GC2M0040120D N-Channel TO-247-3 1.2kV 55A 80mΩ@20V 3.2V
SUPSiC 📄 PDF
M2M-0080-120D N-Channel TO-247-3 1.2kV 28A 98mΩ 4V
Megain 📄 PDF
NTHL080N120SC1 N-Channel TO-247-3 1.2kV 31A 110mΩ 4.3V
onsemi 📄 PDF
CI72N170SM N-Channel TO-247-3 1.7kV 72A - 4V
Tokmas 📄 PDF