CI30N65SM MOSFET Datasheet & Specifications

N-Channel TO-247-3 Logic-Level Tokmas
Vds Max
650V
Id Max
30A
Rds(on)
65mΩ@20V
Vgs(th)
2.3V

Quick Reference

The CI30N65SM is an N-Channel MOSFET in a TO-247-3 package, manufactured by Tokmas. It supports a drain-source breakdown voltage of 650V and a continuous drain current of 30A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerTokmasOriginal Manufacturer
PackageTO-247-3Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)650VMax breakdown voltage
Continuous Drain Current (Id)30AMax current handling
Power Dissipation (Pd)171WMax thermal limit
On-Resistance (Rds(on))65mΩ@20VResistance when turned fully on
Gate Threshold (Vgs(th))2.3VVoltage required to turn on
Gate Charge (Qg)65nCSwitching energy
Input Capacitance (Ciss)1.7nFInternal gate capacitance
Output Capacitance (Coss)-Internal output capacitance
Operating Temp-55℃~+175℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
CI90N120SM N-Channel TO-247-3 1.2kV 90A 27mΩ@20V 2.5V
Tokmas 📄 PDF
GC3M0032120D N-Channel TO-247-3 1.2kV 63A 32mΩ@15V 2.5V
SUPSiC 📄 PDF
GC3M0040120D N-Channel TO-247-3 1.2kV 66A 40mΩ@15V 2.7V
SUPSiC 📄 PDF